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MC10E131 2SC3526H R9G21812 05220 CPH3337 RBC1411 F2023ERW KBPC1
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 Transistor
Small switching (30V, 0.1A)
2SK3018
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. FApplications Interfacing, switching (30V, 100mA) FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FExternal dimensions (Units: mm)
FEquivalent circuit
170
Transistor
FElectrical characteristics (Ta = 25_C)
2SK3018
FPackaging specifications
FElectrical characteristic curves
Fig.1
Typical output characteristics
Fig.2
Typical transfer characteristics
Fig.3 Gate threshold voltage vs. channel temperature
171
Transistor
2SK3018
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Forward transfer admittance vs. drain current
Fig.11 Typical capacitance vs. drain-source voltage
Fig.12 Switching characteristics (See Figures. 13 and 14 for the measurement circuit and resultant waveforms)
172
Transistor
FSwitching characteristics measurement circuit
2SK3018
173


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